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   DPG10I200PM ns 3 A TVJ =°C25 reverse recovery time A 5.5 35 45 ns IRM max. reverse recovery current IF =A;10 VR =V130 T=125°CVJ -diF/dt =A/μs200 trr TVJ =°C25 T=125°CVJ V = VR 200 Symbol Definition Ratings typ. max. IR V IFAV A VF 1.27 RthJC 4.4 K/W min. 10 VRSM V 1 T = 25°CVJ T = °CVJ 150 mA 0.06 V = VR 200 T = 25°CVJ I = AF 10 V T = °CC 125 Ptot 35 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.45 T = 25°CVJ VF0 V 0.74 T = °CVJ 175 rF 17.7 m? V 0.98 T = °CVJ 150 I = AF 10 V 1.17 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only μA VRRM V 200 max. repetitive reverse blocking voltage T = 25°CVJ CJ 15 junction capacitance V = VR 150 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR VJ max. forward surge current T = °CVJ 175 140 A rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Fast Diode 200 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131125a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |